Maximum Ratings
Rating
Value
15
Unit
dBm
V
Source Power
P
DC Voltage
VDC
VESD
TA
0
ESD Voltage (HB)
800
V
Operating Temperature Range
Storage Temperature Range
-40 ~ +85
-40 ~ +85
°C
Tstg
°C
Electrical Characteristics
Reference temperature:
TA = 25 °C
Terminating source impedance:
Terminating load impedance:
ZS = 50 Ω
ZL = 50 Ω
Characteristic
Min.
Typ.
140.0
7.9
Max.
—
Unit
MHz
dB
Center frequency
fC
IL
—
—
Insertion attenuation @ 140.0 MHz
10.0
Pass bandwidth
BW1
8.5
8.9
—
MHz
αrel ≤ 1 dB
Passband ripple (p-p)
fC ± 3.5 MHz
Δα
—
0.4
34
1.0
dB
dB
ns
fC ± 7 MHz
30
Ultimate Rejection
fC ± 14 MHz
35
—
38
770
1.5
Group delay (fC ± 3.5 MHz)
SWR (fC ± 3.5 MHz)
—
S11
S22
2.0
2.0
5.0
30
3.0
10
60
Phase ripple (fC ± 3.5 MHz)
degree
ns
Group delay ripple (fC ± 3.5 MHz)
Temperature Coefficient of Frequency
Δ
—
—
TCf
-90
—
ppm/K
RoHS Compliant
Electrostatic Sensitive Device
Test Matching Network
L1=150nH
L2=100nH
C1=18pF
(Notes: Component values may change depending on board layout!)
L3=220nH
Iss1 C1u, Date 13-7-2011
Page 2 of 4
ACT [ ADVANCED CRYSTAL TECHNOLOGY ]
