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AL10051N3DL 参数 Datasheet PDF下载

AL10051N3DL图片预览
型号: AL10051N3DL
PDF下载: 下载PDF文件 查看货源
内容描述: 薄膜片式电感器 [THIN FILM CHIP INDUCTOR]
分类和应用: 电感器
文件页数/大小: 66 页 / 368 K
品牌: ABC [ ABC Taiwan Electronics Corp ]
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AL103 Revision 1.0  
Table 44: SGRAM Read Timing  
SYMBOL  
tAC  
DESCRIPTION  
MIN  
-
TYP  
MAX  
UNIT  
ns  
Access time.  
-
-
-
-
10  
-
tAH  
Access hold time.  
Access setup time.  
2
ns  
tAS  
2.5  
1
-
ns  
tCH  
PBCS#, PBRAS#, PBWE# hold  
time.  
-
ns  
tCHI  
tCK  
Clock high level width.  
System clock cycle time.  
CKE hold time.  
3
13  
2
-
-
-
-
-
-
-
-
-
-
-
-
ns  
ns  
ns  
ns  
ns  
ns  
tCKH  
tCKS  
tCL  
CKE setup time.  
3
Clock low level width.  
3
tCS  
PBCS#, PBRAS#, PBWE#  
setup time.  
2.5  
tHZ  
tLZ  
tOH  
tRAS  
Data out high impedance time.  
Data out low impedance time.  
Data out hold time.  
-
2
-
-
-
-
8
-
ns  
ns  
ns  
ns  
2
-
Active to precharge command  
period.  
48  
-
tRCD  
Active to read delay.  
24  
-
-
ns  
Note: This timing requirement is for a SGRAM running at CAS Latency 2. Typically  
a -8 speed grade SGRAM needs to be used.  
9/00  
Reference Only / Allayer Communications  
55  
 
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