V
DRM
V
DSM
I
T(AV)M
I
T(RMS)
I
TSM
V
(T0)
r
T
=
=
=
=
=
=
=
4400
5200
4120
6470
85.2×10
3
1.04
0.115
V
V
A
A
A
V
mΩ
Ω
Phase Control Thyristor
5STP 52U5200
Doc. No. 5SYA1042-02 Dec. 03
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•
•
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Patented free-floating silicon technology
Low on-state and switching losses
Designed for traction, energy and industrial applications
Optimum power handling capability
Interdigitated amplifying gate
Blocking
Maximum rated values
1)
Symbol
V
DSM,
V
RSM
V
DRM,
V
RRM
V
RSM
dV/dt
crit
Parameter
Conditions
f = 5 Hz, t
p
= 10 ms
f = 50 Hz, t
p
= 10 ms
t
p
= 5 ms, single pulse
Exp. to 0.67 x V
DRM
, T
vj
= 110°C
Symbol Conditions
I
DSM
I
RSM
5STP 52U5200 5STP 52U5000
5200 V
4400 V
5700 V
5000 V
4200 V
5500 V
2000 V/µs
min
typ
5STP 52U4600
4600 V
4000 V
5100 V
Characteristic values
max
600
600
Unit
mA
mA
Forward leakage current
Reverse leakage current
V
DSM
, T
vj
= 110°C
V
RSM
, T
vj
= 110°C
Mechanical data
Maximum rated values
1)
Parameter
Mounting force
Acceleration
Acceleration
Characteristic values
Symbol Conditions
F
M
a
a
Device unclamped
Device clamped
min
120
typ
135
max
160
50
100
Unit
kN
m/s
m/s
Unit
kg
mm
mm
mm
2
2
Parameter
Weight
Housing thickness
Surface creepage distance
Symbol Conditions
m
H
D
S
F
M
= 135 kN, T
a
= 25 °C
min
34.4
56
typ
max
3.6
35.4
Air strike distance
D
a
22
1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB [ THE ABB GROUP ]
