5STP 50Q1800
Max. on-state characteristic model:
Max. on-state characteristic model:
V
T
25
=
A
Tvj
+
B
Tvj
⋅
I
T
+
C
Tvj
⋅
ln(
I
T
+
1)
+
D
Tvj
⋅
I
T
Valid for I
T
= 200 – 100000 A
A
25
B
25
C
25
D
25
-3
-6
-3
-3
932.00×10
25.28×10
-14.74×10
3.72×10
V
T
125
=
A
Tvj
+
B
Tvj
⋅
I
T
+
C
Tvj
⋅
ln(
I
T
+
1)
+
D
Tvj
⋅
I
T
Valid for I
T
= 200 – 100000 A
A
125
-3
334.70×10
B
125
-6
29.36×10
C
125
-3
61.20×10
D
125
-3
2.31×10
Fig. 2
On-state characteristics.
T
j
=125°C, 10ms half sine
Fig. 3
Max. on-state voltage characteristics
Fig. 4
On-state power dissipation vs. mean on-state
current. Turn - on losses excluded.
Fig. 5
Max. permissible case temperature vs. mean
on-state current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1070-01 Okt. 03
page 4 of 6
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