5STP 45Q2800
On-state
ITAVM
ITRMS
ITSM
Max. average on-state current
5490 A
8625 A
Half sine wave, TC = 70°C
Max. RMS on-state current
Max. peak non-repetitive
surge current
75000 A
79000 A
28125 kA2s
25900 kA2s
1.29 V
tp
tp
tp
tp
IT
=
=
=
=
=
=
10 ms
8.3 ms
Tj =
125°C
After surge:
I2t
Limiting load integral
10 ms
VD = VR = 0V
8.3 ms
VT
On-state voltage
6000 A
VT0
rT
Threshold voltage
Slope resistance
0.86 V
IT
3000 - 9000 A
Tj =
125°C
0.070
mW
IH
Holding current
40-100 mA
20-75 mA
Tj
Tj
Tj
Tj
= 25°C
= 125°C
= 25°C
= 125°C
IL
Latching current
100-500 mA
150-350 mA
Switching
di/dtcrit
Critical rate of rise of on-state
250 A/µs Cont.
Tj = 125°C
VD £ 0.67×VDRM
current
500 A/µs 60 sec.
ITRM
=
=
=
=
>
3000 A f = 50 Hz
2.0 A tr = 0.5 µs
2.0 A tr = 0.5 µs
3000 A Tj = 125°C
200 V
IFG
td
tq
Delay time
3.0 µs
IFG
£
£
VD = 0.4×VDRM
VD £ 0.67×VDRM
Turn-off time
400 µs
ITRM
dvD/dt = 20V/µs VR
Qrr
Recovery charge
min
4200 µAs
6500 µAs
diT/dt =
-5 A/µs
max
Triggering
VGT
Gate trigger voltage
2.6 V
Tj = 25°C
IGT
Gate trigger current
400 mA Tj = 25°C
VGD
IGD
Gate non-trigger voltage
Gate non-trigger current
Peak forward gate voltage
Peak forward gate current
Peak reverse gate voltage
Maximum gate power loss
0.3 V
10 mA
12 V
10 A
10 V
3 W
VD
VD
=
=
0.4×VDRM
0.4×VDRM
VFGM
IFGM
VRGM
PG
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1050-01 Sep.00
2 of 6
ABB [ THE ABB GROUP ]
