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5STP38Q4200 参数 Datasheet PDF下载

5STP38Q4200图片预览
型号: 5STP38Q4200
PDF下载: 下载PDF文件 查看货源
内容描述: 相位控制晶闸管 [Phase Control Thyristor]
分类和应用: 栅极
文件页数/大小: 6 页 / 221 K
品牌: ABB [ THE ABB GROUP ]
 浏览型号5STP38Q4200的Datasheet PDF文件第1页浏览型号5STP38Q4200的Datasheet PDF文件第3页浏览型号5STP38Q4200的Datasheet PDF文件第4页浏览型号5STP38Q4200的Datasheet PDF文件第5页浏览型号5STP38Q4200的Datasheet PDF文件第6页  
5STP 38Q4200  
On-state  
ITAVM  
ITRMS  
ITSM  
Max. average on-state current  
4275 A  
6715 A  
Half sine wave, TC = 70°C  
Max. RMS on-state current  
Max. peak non-repetitive  
surge current  
60000 A  
65000 A  
18000 kA2s  
17500 kA2s  
1.35 V  
tp  
tp  
tp  
tp  
IT  
=
=
=
=
=
=
10 ms  
8.3 ms  
Tj =  
125°C  
After surge:  
I2t  
Limiting load integral  
10 ms  
VD = VR = 0V  
8.3 ms  
VT  
On-state voltage  
3000 A  
VT0  
rT  
Threshold voltage  
Slope resistance  
0.95 V  
IT  
2500 - 7500 A  
Tj =  
125°C  
0.130  
mW  
IH  
Holding current  
40-100 mA  
20-75 mA  
Tj  
Tj  
Tj  
Tj  
= 25°C  
= 125°C  
= 25°C  
= 125°C  
IL  
Latching current  
100-500 mA  
150-350 mA  
Switching  
di/dtcrit  
Critical rate of rise of on-state  
250 A/µs Cont.  
Tj = 125°C  
VD £ 0.67×VDRM  
current  
500 A/µs 60 sec.  
ITRM  
=
=
=
=
>
5000 A f = 50 Hz  
2.0 A tr = 0.5 µs  
2.0 A tr = 0.5 µs  
5000 A Tj = 125°C  
200 V  
IFG  
td  
tq  
Delay time  
3.0 µs  
IFG  
£
£
VD = 0.4×VDRM  
VD £ 0.67×VDRM  
Turn-off time  
600 µs  
ITRM  
dvD/dt = 20V/µs VR  
Qrr  
Recovery charge  
min  
5000 µAs  
diT/dt =  
-5 A/µs  
max  
10000 µAs  
Triggering  
VGT  
Gate trigger voltage  
2.6 V  
Tj = 25°C  
IGT  
Gate trigger current  
400 mA Tj = 25°C  
VGD  
IGD  
Gate non-trigger voltage  
Gate non-trigger current  
Peak forward gate voltage  
Peak forward gate current  
Peak reverse gate voltage  
Maximum gate power loss  
0.3 V  
10 mA  
12 V  
10 A  
10 V  
3 W  
VD  
VD  
=
=
0.4×VDRM  
0.4×VDRM  
VFGM  
IFGM  
VRGM  
PG  
ABB Semiconductors AG reserves the right to change specifications without notice.  
Doc. No. 5SYA1051-01 Sep.00  
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