5STP 38Q4200
Gate trigger characteristics.
Max. peak gate power loss.
Fig. 8
Fig. 9
Recovery charge vs. decay rate of on-state
current.
Peak reverse recovery current vs. decay rate
of on-state current.
Fig. 10
Fig. 11
Turn –off time, typical parameter relationship.
Fig. 12
Fig. 13
Fig. 14
tq/tq1 = f1(Tj)
tq/tq1 = f2(-di/dt)
tq/tq1 = f3(dv/dt)
tq1 :at normalized values (see page 2)
tq : at varying conditions
tq = tq1 · tq/tq1 f1(Tj) · tq/tq1 f2(-di/dt) · tq/tq1 f3(dv/dt)
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1051-01 Sep.00
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ABB [ THE ABB GROUP ]
