5STP 38Q4200
Fig. 8
Gate trigger characteristics.
Fig. 9
Max. peak gate power loss.
Fig. 10
Recovery charge vs. decay rate of on-state
current.
Fig. 11
Peak reverse recovery current vs. decay rate
of on-state current.
Turn –off time, typical parameter relationship
.
Fig. 12
t
q
/t
q1
=
f
1
(
T
j
)
Fig. 13
t
q
/t
q1
=
f
2
(
-di/dt
)
Fig. 14
t
q
/t
q1
=
f
3
(
dv/dt
)
t
q
=
t
q1
•
t
q
/t
q1
f
1
(T
j
)
•
t
q
/t
q1
f
2
(-di/dt)
•
t
q
/t
q1
f
3
(dv/dt)
t
q1
:at normalized values (see page 2)
t
q
: at varying conditions
ABB Semiconductors AG reserves the right to change specifications without notice.
5 of 6
Doc. No. 5SYA1051-01 Sep.00
ABB [ THE ABB GROUP ]
