5STP 30H1801
I
T
( A )
I
TSM
( kA )
20000
18000
16000
14000
12000
10000
I
TSM
70
65
60
55
50
2
∫
i dt
15
14
13
12
11
10
9
8
7
100
8000
6000
4000
2000
0
0
0,5
1
1,5
2
2,5
3
V
T
( V )
30
1
10
t ( ms )
45
40
35
Fig. 2
Max. on-state voltage characteristics
7
Fig. 3
Surge forward current vs. pulse length. Half
sine wave, single pulse, V
R
= 0 V
V
G
( V )
14
V
FGM
V
G
( V )
6
DC = P
GAVm
12
5
-40 °C
10
500µs
1ms
4
+25 °C
8
2
I
GTmin
+125 °C
4
1
V
GTmin
2
10ms
DC = P
GAVm
0
0
0
0,5
1
0
I
G
( A )
2
4
6
8
10
I
FGM
3
6
12
I
G
( A )
Fig. 4
Gate trigger characteristics
Fig. 5
Gate trigger characteristics
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1066-01 March 05
page 4 of 6
i
2
dt
(10
6
A
2
s)
22000
25°C
125°C
75
16
ABB [ THE ABB GROUP ]
