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5STP18F1600 参数 Datasheet PDF下载

5STP18F1600图片预览
型号: 5STP18F1600
PDF下载: 下载PDF文件 查看货源
内容描述: 相位控制晶闸管 [Phase Control Thyristor]
分类和应用:
文件页数/大小: 5 页 / 280 K
品牌: ABB [ THE ABB GROUP ]
 浏览型号5STP18F1600的Datasheet PDF文件第1页浏览型号5STP18F1600的Datasheet PDF文件第3页浏览型号5STP18F1600的Datasheet PDF文件第4页浏览型号5STP18F1600的Datasheet PDF文件第5页  
5STP 18F1800  
On-state  
ITAVM Max. average on-state current  
ITRMS Max. RMS on-state current  
1660 A  
2610 A  
Half sine wave, TC = 70°C  
ITSM  
Max. peak non-repetitive  
surge current  
21000 A  
tp =  
tp =  
10 ms  
8.3 ms  
10 ms  
Tj = 125°C  
22000 A  
After surge:  
I2t  
Limiting load integral  
2205 kA2
s tp =  
2008 kA2
s tp =  
VD = VR = 0V  
8.3 ms  
2000 A  
VT  
VT0  
rT  
On-state voltage  
Threshold voltage  
Slope resistance  
Holding current  
1.30 V  
0.83 V  
IT =  
IT = 1000 - 3000 A  
Tj = 125°C  
0.230  
mΩ  
IH  
20-70 mA Tj = 25°C  
15-60 mA Tj = 125°C  
100- mA T
j
= 25°C  
IL  
Latching current  
500  
50-200 mA T
j
= 125°C  
Switching  
di/dtcrit Critical rate of rise of on-state  
current  
150 A/µs Cont. f = 50 Hz  
VD 0.67VDRM , Tj = 125°C  
ITRM = 2000 A  
300 A/µs 60 sec.  
f = 50Hz  
IFG = 2 A, tr = 0.5 µs  
IFG = 2 A, tr = 0.5 µs  
ITRM = 2000 A, Tj = 125°C  
td  
tq  
Delay time  
3.0 µs  
VD = 0.4VDRM  
VD 0.67VDRM  
Turn-off time  
400 µs  
dvD/dt = 20V/µs VR > 200 V, diT/dt = -20 A/µs  
Qrr  
Recovery charge  
min  
2500 µAs  
4500 µAs  
max  
Triggering  
VGT  
Gate trigger voltage  
2.6 V  
Tj = 25°  
IGT  
Gate trigger current  
400 mA Tj = 25°  
VGD  
IGD  
Gate non-trigger voltage  
Gate non-trigger current  
0.3 V  
10 mA  
12 V  
10 A  
10 V  
3 W  
VD =0.4 x VDRM  
VD = 0.4 x VDRM  
VFGM Peak forward gate voltage  
IFGM Peak forward gate current  
VRGM Peak reverse gate voltage  
PG Gate power loss  
ABB Semiconductors AG reserves the right to change specifications without notice.  
Doc. No. 5SYA1028-04 Sep. 01  
page 2 of 5