5STP 17F2201
25°C 125°C
40
35
30
25
20
15
10
5
10000
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
I TSM
i2dt
ò
4,5
4
3,5
3
2,5
2
0
1
2
3
4
VT ( V )
1
10
100
t ( ms )
Fig. 2 Max. on-state voltage characteristics
Fig. 3 Surge forward current vs. pulse length. Half
sine wave, single pulse, VR = 0 V
14
7
VFGM
12
6
5
4
3
2
1
0
DC = P GAVm
500µs
1ms
10
8
-40 °C
+25 °C
6
+125 °C
4
10ms
DC = P GAVm
2
VGTmin
0
0
2
4
6
8
10
I G ( A )
12
0
0,5
1
I G ( A )
Fig. 4 Gate trigger characteristics
Fig. 5 Gate trigger characteristics
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1063-01 March 05
page 4 of 6