5STP 16F2800
Fig. 8 Gate trigger characteristics.
Fig. 9 Max. peak gate power loss.
Fig. 10 Recovery charge vs. decay rate of on-
state current.
Fig. 11 Peak reverse recovery current vs. decay
rate of on-state current.
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB Semiconductors AG
Fabrikstrasse 3
Doc. No. 5SYA1022-03 Sep. 01
CH-5600 Lenzburg, Switzerland
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