5STP 12N8500
Triggering
Maximum rated values
1)
Parameter
Peak forward gate voltage
Peak forward gate current
Peak reverse gate voltage
Average gate power loss
Characteristic values
Symbol Conditions
V
FGM
I
FGM
V
RGM
P
G(AV)
Symbol Conditions
V
GT
I
GT
V
GD
I
GD
T
vj
= 25 °C
T
vj
= 25 °C
V
D
= 0.4 x V
DRM
, T
vjmax
= 90 °C
V
D
= 0.4 x V
DRM
, T
vjmax
= 90°C
min
typ
max
12
10
10
Unit
V
A
V
see Fig. 9
min
typ
max
2.6
400
0.3
10
Unit
V
mA
V
mA
Parameter
Gate-trigger voltage
Gate-trigger current
Gate non-trigger voltage
Gate non-trigger current
Thermal
Maximum rated values
1)
Parameter
Operating junction
temperature range
Characteristic values
Symbol Conditions
T
vj
min
typ
max
90
Unit
°C
°C
Unit
K/kW
K/kW
K/kW
K/kW
K/kW
Storage temperature range T
stg
Parameter
Symbol Conditions
Double-side cooled
F
m
= 81...108 kN
Anode-side cooled
F
m
= 81...108 kN
Cathode-side cooled
F
m
= 81...108 kN
Double-side cooled
F
m
= 81...108 kN
Single-side cooled
F
m
= 81...108 kN
-40
min
typ
140
max
5.7
11.4
11.4
1
2
Thermal resistance junction R
th(j-c)
to case
R
th(j-c)A
R
th(j-c)C
Thermal resistance case to R
th(c-h)
heatsink
R
th(c-h)
Analytical function for transient thermal
impedance:
Z
th(j-c)
(t) =
∑
R
th i
(1 - e
-t/
τ
i
)
i
=
1
i
R
th i
(K/kW)
τ
i
(s)
1
3.400
0.8685
2
1.260
0.1572
3
0.680
0.0219
4
0.350
0.0078
Fig. 1
Transient thermal impedance junction-to case.
n
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1044-02 Nov. 04
page 3 of 6
ABB [ THE ABB GROUP ]
