5STB 17N5200
Thermal
T
j
T
stg
R
thJC
Operating junction temperature range
Storage temperature range
Thermal resistance
junction to case
-40…125 °C
-40…150 °C
22.8 K/kW
22.8 K/kW
11.4 K/kW
R
thCH
Thermal resistance case to
heat sink
Analytical function for transient thermal
impedance:
Anode side cooled
Cathode side cooled
Double side cooled
Single side cooled
Double side cooled
4 K/kW
2 K/kW
Z
thJC
[K/kW]
15
180° sine:
add 1 K/kW
180° rectangular: add 1 K/kW
120° rectangular: add 1 K/kW
60° rectangular: add 2 K/kW
Z
thJC
(t) =
å
R
i
(1 - e
i
=
1
i
R
i
(K/kW)
τ
i
(s)
1
6.77
0.8651
2
2.51
0.1558
3
1.34
0.0212
n
- t/
τ
i
)
4
10
5
F
m
= 81..108 kN
Double-side cooling
0
0.001
BN1
0.78
0.0075
0.010
0.100
1.000
10.000
t [s]
Fig. 1 Transient thermal impedance junction to case.
On-state characteristic model:
VT
=
A
+
B
⋅
iT
+
C
⋅
ln(
iT
+
1)
+
D
⋅
IT
Valid for i
T
= 500 – 4000 A
A
1.309
B
0.00008
C
-0.125
D
0.026
Fig. 2 On-state characteristics.
Fig. 3 On-state characteristics.
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1036-03 Sep. 01
page 3 of 6