5SNE 0800E330100
4.0
3.5
3.0
2.5
E
on
, E
off
[J]
E
on
, E
off
[J]
E
off
2.0
1.5
V
CC
= 1800 V
V
GE
= ±15 V
R
G
= 2.2 ohm
T
vj
= 125 °C
L
σ
= 100 nH
E
on
7.0
V
CC
= 1800 V
I
C
= 800 A
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 100 nH
E
on
6.0
5.0
4.0
3.0
2.0
1.0
0.5
E
sw
[J] = 1.03 x 10
-6
x I
C2
+ 1.86 x 10
-3
x I
C
+ 419 x 10
-3
E
off
1.0
0.0
0
400
800
I
C
[A]
1200
1600
0.0
0
5
10
15
20
25
R
G
[ohm]
Fig. 5
Typical switching energies per pulse
vs collector current
Fig. 6
Typical switching energies per pulse
vs gate resistor
10
10
V
CC
= 1800 V
I
C
= 800 A
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 100 nH
t
d(on)
, t
r
, t
d(off)
, t
f
[µs]
t
d(off)
t
d(off)
t
f
t
d(on)
, t
r
, t
d(off)
, t
f
[µs]
1
t
d(on)
t
r
1
t
d(on)
0.1
t
r
V
CC
= 1800 V
R
G
= 2.2 ohm
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 100 nH
t
f
0.01
0
400
800
I
C
[A]
1200
1600
0.1
0
5
10
15
20
25
R
G
[ohm]
Fig. 7
Typical switching times
vs collector current
Fig. 8
Typical switching times
vs gate resistor
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1562-01 July 07
page 6 of 9
ABB [ THE ABB GROUP ]
