5SNA 1500E330300
E
rec
2500
2000
R
G
= 3.3 ohm
R
G
= 2.2 ohm
E
rec
[mJ], I
rr
[A], Q
rr
[µC]
E
rec
[mJ],I
rr
[A], Q
rr
[µC]
1500
V
CC
= 1800 V
V
GE
= ±15 V
R
Gon
= 1.0 ohm
R
Goff
= 1.5 ohm
C
GE
= 220 nF
T
vj
= 125 °C
L
σ
= 100 nH
E
rec
[mJ] = -239 x 10
-6
x I
F 2
+ 1.45 x I
F
+ 355
Q
rr
1000
1000
E
rec
500
I
rr
V
CC
= 1800 V
I
F
= 1500 A
T
vj
= 125 °C
L
σ
= 100 nH
C
GE
= 220 nF
1
2
3
4
5
6
7
500
0
0
500
1000
1500
I
F
[A]
2000
2500
3000
0
0
di/dt [kA/µs]
Fig. 12
Typical reverse recovery characteristics
vs forward current
Fig. 13
Typical reverse recovery characteristics
vs di/dt
3000
3000
2500
25 °C
2000
125 °C
I
F
[A]
1500
I
F
[A]
2000
2500
R
G
= 1.8 ohm
I
rr
V
CC
≤
2500 V
di/dt
≤
10 kA/µs
T
vj
= 125 °C
1500
1000
1000
500
500
0
0
0.5
1
1.5
V
F
[V]
2
2.5
3
0
0
500
1000
1500
2000
2500
3000
3500
V
R
[V]
Fig. 14
Typical diode forward characteristics,
chip level
Fig. 15
Safe operating area diode (SOA)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1595-00 July 07
page 8 of 9
R
G
= 1.5 ohm
R
G
= 1.2 ohm
R
G
= 1.0 ohm
Q
rr
1500
R
G
= 10 ohm
2000
R
G
= 5.6 ohm
ABB [ THE ABB GROUP ]
