5SNA 1200G330100
5)
Diode characteristic values
Parameter
Symbol Conditions
min typ max Unit
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
2.3
6)
Forward voltage
VF
Irr
IF = 1200 A
V
2.0 2.35 2.7
1090
A
Reverse recovery current
Recovered charge
1420
VCC = 1800 V,
IF = 1200 A,
VGE = ±15 V,
RG = 1.5 W
Ls = 125 nH
inductive load
710
µC
Qrr
trr
1300
560
ns
Reverse recovery time
Reverse recovery energy
1280
880
mJ
Erec
1670
5)
Characteristic values according to IEC 60747 – 2
Forward voltage is given at chip level
6)
7)
Package properties
Parameter
Symbol Conditions
min typ max Unit
IGBT thermal resistance
junction to case
Rth(j-c)IGBT
0.0085 K/W
Diode thermal resistance
junction to case
Rth(j-c)DIODE
0.017 K/W
2)
7)
IGBT thermal resistance
case to heatsink
Rth(c-s)IGBT IGBT per switch, l grease = 1W/m x K
Rth(c-s)DIODE Diode per switch, l grease = 1W/m x K
0.009
0.018
K/W
K/W
V
Diode thermal resistance
case to heatsink
Partial discharge extinction
voltage
Ve
5100
f = 50 Hz, QPD £ 10pC (acc. to IEC 61287)
Comparative tracking index
CTI
³ 600
2)
For detailed mounting instructions refer to ABB Document No. 5SYA2039
7)
Mechanical properties
Parameter
Symbol Conditions
min typ max Unit
L x W x H
190 x 140 x 48
Dimensions
Typical , see outline drawing
mm
Term. to base: 40
according to IEC 60664-1
and EN 50124-1
Clearance distance in air
Surface creepage distance
da
mm
Term. to term: 26
Term. to base: 64
Term. to term: 56
according to IEC 60664-1
and EN 50124-1
ds
m
mm
g
Mass
1760
7)
Package and mechanical properties according to IEC 60747 – 15
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1563-00 Apr.06
page 3 of 9
ABB [ THE ABB GROUP ]
