5SNA 1200E250100
3.5
V
CC
= 1250 V
R
G
= 1.5 ohm
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 100 nH
6
V
CC
= 1250 V
I
C
= 1200 A
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 100 nH
3.0
5
E
on
4
2.5
E
on
, E
off
[J]
2.0
E
off
1.5
E
on
, E
off
[J]
E
on
3
2
1.0
1
E
sw
[mJ] = 325 x 10
-6
x I
C 2
+ 1.31 x I
C
+347
E
off
0.5
0.0
0
500
1000
I
C
[A]
1500
2000
2500
0
0
5
R
G
[ohm]
10
15
Fig. 5
Typical switching energies per pulse
vs collector current
Fig. 6
Typical switching energies per pulse
vs gate resistor
10
10
V
CC
= 1250 V
I
C
= 1200 A
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 100 nH
t
d(off)
t
d(off)
t
d(on)
, t
r
, t
d(off)
, t
f
[µs]
1
t
d(on)
, t
r
, t
d(off)
, t
f
t
f
t
d(on)
t
r
1
t
d(on)
0.1
t
r
V
CC
= 1250 V
R
G
= 1.5 ohm
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 100 nH
t
f
0.01
0
500
1000
I
C
[A]
1500
2000
2500
0.1
0
5
10
R
G
[ohm]
15
20
Fig. 7
Typical switching times
vs collector current
Fig. 8
Typical switching times
vs gate resistor
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1557-02 July 04
page 6 of 9
ABB [ THE ABB GROUP ]
