5SNA 0600G650100
14
12
10
8
20
18
16
14
12
10
8
VCC = 3600 V
RG = 3.9 ohm
VGE = ±15 V
Tvj = 125 °C
Ls = 280 nH
VCC = 3600 V
IC = 600 A
VGE = ±15 V
Tvj = 125 °C
Ls = 280 nH
Eon
Eon
6
6
Eoff
4
Eoff
4
2
2
Esw [J] = 6.77 x 10-6 x IC2 + 6.6 x 10-3 x IC + 1.52
0
0
0
300
600
IC [A]
900
1200
0
10
20
30
40
RG [ohm]
Fig. 5
Typical switching energies per pulse
vs collector current
Fig. 6
Typical switching energies per pulse
vs gate resistor
10
10
td(off)
VCC = 3600 V
RG = 3.9 ohm
VGE = ±15 V
td(on)
Tvj = 125 °C
td(off)
Ls = 280 nH
tf
tr
tf
1
1
td(on)
VCC = 3600 V
IC = 600 A
VGE = ±15 V
Tvj = 125 °C
Ls = 280 nH
tr
0.1
0.1
0
10
20
30
40
0
300
600
IC [A]
900
1200
RG [ohm]
Fig. 7
Typical switching times
vs collector current
Fig. 8
Typical switching times
vs gate resistor
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1558-02 Jan 06
page 6 of 9
ABB [ THE ABB GROUP ]
