5SMY 12J1200
IGBT characteristic values
Parameter
Collector (-emitter)
breakdown voltage
Collector-emitter
saturation voltage
Collector cut-off current
Gate leakage current
Gate-emitter threshold voltage
Gate charge
Input capacitance
Output capacitance
Reverse transfer capacitance
Internal gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
2)
Symbol Conditions
V
(BR)CES
V
CE sat
I
CES
I
GES
V
GE(TO)
Q
ge
C
ies
C
oes
C
res
R
Gint
t
d(on)
t
r
t
d(off)
t
f
V
CC
= 600 V, I
C
= 75 A,
R
G
= 15
Ω,
V
GE
=
±15
V,
L
σ
= 60 nH,
inductive load
V
CC
= 600 V, I
C
= 75 A,
R
G
= 15
Ω,
V
GE
=
±15
V,
L
σ
= 60 nH,
inductive load
V
CC
= 600 V, I
C
= 75 A,
V
GE
= ±15 V, R
G
= 15
Ω,
L
σ
= 60 nH,
inductive load,
FWD: 5SLX 12F1200
V
CC
= 600 V, I
C
= 75 A,
V
GE
= ±15 V, R
G
= 15
Ω,
L
σ
= 60 nH,
inductive load
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
V
GE
= 0 V, I
C
= 1 mA, T
vj
= 25 °C
I
C
= 75 A, V
GE
= 15 V
V
CE
= 1200 V, V
GE
= 0 V
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
min
1200
typ
max
Unit
V
1.8
2.0
100
300
-200
5
6.2
780
5.52
0.40
0.26
3
150
160
65
65
440
500
55
70
7.45
200
7
V
V
µA
µA
nA
V
nC
nF
Ω
ns
ns
ns
ns
V
CE
= 0 V, V
GE
=
±20
V, T
vj
= 125 °C
I
C
= 3 mA, V
CE
= V
GE
, T
vj
= 25 °C
I
C
= 75 A, V
CE
= 600 V, V
GE
= -15 ..15 V
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz,
T
vj
= 25 °C
Turn-on switching energy
E
on
mJ
10.3
4.9
mJ
7.8
420
A
Turn-off switching energy
E
off
Short circuit current
2)
I
SC
t
psc
≤
10
μs,
V
GE
= 15 V, T
vj
= 125 °C,
V
CC
= 900 V, V
CEM
≤
1200 V
Characteristic values according to IEC 60747 - 9
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1636-01 Sep 06
page 2 of 5
ABB [ THE ABB GROUP ]
