5SMY 12H1200
171
171
V
CE
= 20 V
142.5
142.5
114
25 °C
I
C
[A]
85.5
I
C
[A]
125 °C
114
85.5
57
57
125 °C
28.5
V
GE
= 15 V
0
0
1
2
V
CE
[V]
3
4
28.5
25 °C
0
0
1
2
3
4
5
6
7
8
9 10 11 12 13
V
GE
[V]
Fig. 1
Typical on-state characteristics
Fig. 2
Typical transfer characteristics
80
70
60
50
40
E
on
30
20
10
E
sw
[mJ] = 2.49 x 10 x
-3
2
I
C
16
V
CC
= 600 V
R
G
= 18 ohm
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 60 nH
14
12
10
E
on
, E
off
[mJ]
8
6
4
E
off
2
+ 0.01 x I
C
+ 4.58
E
on
, E
off
[mJ]
0
0
28.5
57
85.5
I
C
[A]
114
142.5
171
V
CC
= 600 V
I
C
= 57 A
V
GE
= ±15 V
T
vj
= 125 °C
0
10
20
30
R
G
[ohm]
40
50
60
0
Fig. 3
Typical switching characteristics vs
collector current
Fig. 4
Typical switching characteristics vs
gate resistor
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1638-01 Sep 06
page 4 of 5
ABB [ THE ABB GROUP ]
