5SMX 12N4507
Mechanical properties
Parameter
Overall die L
x
W
Dimensions
exposed
L
x
W (except gate pad)
front metal
gate pad
thickness
Metallization
3)
3)
Unit
14.3
x
14.3
9.0
x
9.0
1.51
x
1.48
530 ± 20
AlSi1 + Al
AlSi1 + TiNiAg
4+8
1.8 + 1.2
mm
mm
mm
µm
µm
µm
L
x
W
front (E)
back (C)
For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033.
Outline drawing
Note: all dimensions are shown in mm
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, Chap. IX.
This product has been designed and qualified for Industrial Level.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1626-03 July 06
page 3 of 5
ABB [ THE ABB GROUP ]
