5SMX 12L2511
Mechanical properties
Parameter
Overall die L
x
W
Dimensions
exposed
L
x
W (except gate pad)
front metal
gate pad
thickness
Metallization
3)
3)
Unit
12.4
x
12.4
9.0
x
9.0
1.46
x
1.61
310 ± 20
AlSi1 + TiNiAg
AlSi1 + TiNiAg
4+4
1.8 + 1.2
mm
mm
mm
µm
µm
µm
L
x
W
front (E)
back (C)
For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033.
Outline drawing
12.38
±0.05
10.67
+0.04
9.00
-0
Note: all dimensions are shown in mm
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, Chap. IX.
This product has been designed and qualified for Industrial Level.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1640-00 Mar 07
page 3 of 5
1.61
±0.05
+0.04
1.90
-0
ABB [ THE ABB GROUP ]
