5SMX 12H1273
Mechanical properties
Parameter
Overall die L
x
W
Dimensions
exposed
L
x
W (except gate pad)
front metal
gate pad
thickness
Metallization
3)
3)
Unit
9.1
x
9.0
7.6
x
7.5
1.2
x
1.2
130 ± 20
AlSi1
Al / Ti / Ni / Ag
4
1.8
mm
mm
mm
µm
µm
µm
L
x
W
front (E)
back (C)
For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033.
Outline drawing
G
Emitter
Note: all dimensions are shown in mm
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, Chap. IX.
This product has been designed and qualified for Industrial Level.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1641-00 Apr 07
page 3 of 5
ABB [ THE ABB GROUP ]
