5SMX 12E1273
50
50
V
CE
= 20V
25 °C
40
125 °C
40
30
I
C
[A]
I
C
[A]
30
20
20
125 °C
10
10
25 °C
V
GE
= 15V
0
0
1
2
V
CE
[V]
3
4
0
0
1
2
3
4
5
6
V
GE
[V]
7
8
9
10 11 12
Fig. 1
Typical on-state characteristics
Fig. 2
Typical transfer characteristics
22
20
18
16
14
E
on
, E
off
[mJ]
E
on
, E
off
[mJ]
12
10
8
6
4
E
off
2
0
0
10
20
30
40
I
C
[A]
50
60
70
80
E
on
V
CC
= 600 V
R
Gon
= 33 ohm
R
Goff
= 47 ohm
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 120 nH
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0
50
100
150
R
G
[ohm]
200
250
300
E
off
V
CC
= 600 V
I
C
= 25 A
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 120 nH
E
on
Fig. 3
Typical switching characteristics vs
collector current
Fig. 4
Typical switching characteristics vs
gate resistor
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1632-00 June 05
page 4 of 5
ABB [ THE ABB GROUP ]
