V
RRM
=
I
F
=
6500 V
50 A
Fast-Diode Die
5SLX 12M6500
Die size: 13.6 x 13.6 mm
Doc. No. 5SYA1666-01 July 07
•
•
•
•
Fast and soft reverse recovery
Low losses
Large SOA
Passivation: SIPOS and Silicon Nitride plus Polyimide
Maximum rated values
Parameter
1)
Symbol
V
RRM
I
F
I
FRM
T
vj
Conditions
T
vj
≥
25 °C
Limited by T
vjmax
min
max
6500
50
100
Unit
V
A
A
°C
Repetitive peak reverse voltage
Continuous forward current
Repetitive peak forward current
Junction temperature
1)
-40
125
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 2
Diode characteristic values
Parameter
Continuous forward voltage
Continuous reverse current
Peak reverse recovery current
Recovered charge
Reverse recovery time
Reverse recovery energy
2)
2)
Symbol
V
F
I
R
I
rr
Q
rr
t
rr
E
rec
Conditions
I
F
= 50 A
V
R
= 6500 V
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
I
F
= 50 A,
V
R
= 3600 V,
di/dt = 230 A/µs,
L
σ
= 3400 nH,
Inductive load,
Switch:
2x 5SMX12M6500
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
min
typ
3.2
3.4
20
3
70
80
65
100
1700
2250
100
180
max
Unit
V
V
µA
6
mA
A
A
µC
µC
ns
ns
mJ
mJ
Characteristic values according to IEC 60747 - 2
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB [ THE ABB GROUP ]
