5SLX 12M3301
200
175
250
V
CC
= 1800 V
di/dt = 550 A/µs
T
vj
= 125 °C
L
σ
= 1200 nH
E
rec
150
25°C
200
125°C
E
rec
[mJ], Q
rr
[µC], I
rr
[A]
150
125
I
F
[A]
100
75
50
100
I
rr
Q
rr
50
25
0
0
0.5
1
1.5
2
V
F
[V]
2.5
3
3.5
4
0
0
50
100
I
F
[A]
150
200
250
Fig. 1
Typical diode forward characteristics
Fig. 2
Typical reverse recovery characteristics
vs. forward current
150
2100
200
175
V
CC
= 1800 V
I
F
= 100 A
T
vj
= 125 °C
L
σ
= 1200 nH
400
350
300
250
I
rr
200
E
rec
Q
rr
150
100
50
0
0
200
400
600
di/dt [A/µs]
800
1000
1200
100
V
CC
= 1800 V
I
F
= 100 A
di/dt = 550 A/µs
T
vj
= 125 °C
L
σ
= 1200 nH
1400
150
700
50
0
0
100
75
-50
-700
50
-100
-1400
25
-150
0
2
4
time [us]
6
8
-2100
0
Fig. 3
Typical diode reverse recovery behaviour
Fig. 4
Typical reverse recovery vs. di/dt
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1661-02 Feb. 05
page 2 of 3
Q
rr
[µC], I
rr
[A]
125
E
rec
[mJ]
V
R
[V]
I
R
[A]
ABB [ THE ABB GROUP ]
