V
RRM
=
I
F
=
1700 V
200 A
Fast-Diode Die
5SLX 12M1711
Die size: 13.6 x 13.6 mm
Doc. No. 5SYA1663-01 Feb. 05
•
•
•
•
Fast and soft reverse-recovery
Low losses
High SOA
Passivation: SIPOS Nitride plus Polyimide
Maximum rated values
Parameter
1)
Symbol
V
RRM
I
F
I
FRM
T
vj
Conditions
min
max
1700
200
Unit
V
A
A
°C
Repetitive peak reverse voltage
Continuous forward current
Repetitive peak forward current
Junction temperature
1)
Limited by T
vjmax
-40
400
125
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 2
Diode characteristic values
Parameter
Continuous forward voltage
Continuous reverse current
Peak reverse recovery current
Recovered charge
Reverse recovery time
Reverse recovery energy
2)
2)
Symbol
V
F
I
R
I
rr
Q
rr
t
rr
E
rec
Conditions
I
F
= 200 A
V
R
= 1700 V
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
I
F
= 200 A,
V
R
= 900 V,
di/dt = 1000 A/µs,
L
σ
= 800 nH,
Inductive load,
Switch:
2x 5SMX12M1701
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
min
1.4
typ
1.65
1.7
max
2.0
100
Unit
V
V
µA
mA
A
A
µC
µC
ns
ns
mJ
mJ
4
150
192
59
98
520
700
46
75
Characteristic values according to IEC 60747 - 2
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB [ THE ABB GROUP ]
