5SHY 35L4511
Max. on-state characteristic model:
Max. on-state characteristic model:
V
T25
=
A
Tvj
+
B
Tvj
⋅
I
T
+
C
Tvj
⋅
ln(
I
T
+
1)
+
D
Tvj
⋅
I
T
A
25
-3
697.2×10
Valid for i
T
= 300 – 30000 A
B
25
C
25
-6
-3
242.8×10
183.2×10
D
25
0.0
V
T125
=
A
Tvj
+
B
Tvj
⋅
I
T
+
C
Tvj
⋅
ln(
I
T
+
1)
+
D
Tvj
⋅
I
T
Valid for i
T
= 300 – 30000 A
A
125
-3
-103.9×10
B
125
-6
354.0×10
C
125
-3
263.9×10
D
125
0.0
Fig. 3
GCT on-state voltage characteristics
Fig. 4
GCT on-state voltage characteristics
Fig. 5
Surge on-state current vs. pulse length, half-
sine wave
Fig. 6
Surge on-state current vs. number of pulses,
half-sine wave, 10 ms, 50Hz
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1234-02 June 07
page 5 of 9
ABB [ THE ABB GROUP ]
