欢迎访问ic37.com |
会员登录 免费注册
发布采购

5SHY35L4510 参数 Datasheet PDF下载

5SHY35L4510图片预览
型号: 5SHY35L4510
PDF下载: 下载PDF文件 查看货源
内容描述: 不对称的集成网关换流晶闸管 [Asymmetric Integrated Gate- Commutated Thyristor]
分类和应用:
文件页数/大小: 9 页 / 434 K
品牌: ABB [ THE ABB GROUP ]
 浏览型号5SHY35L4510的Datasheet PDF文件第1页浏览型号5SHY35L4510的Datasheet PDF文件第3页浏览型号5SHY35L4510的Datasheet PDF文件第4页浏览型号5SHY35L4510的Datasheet PDF文件第5页浏览型号5SHY35L4510的Datasheet PDF文件第6页浏览型号5SHY35L4510的Datasheet PDF文件第7页浏览型号5SHY35L4510的Datasheet PDF文件第8页浏览型号5SHY35L4510的Datasheet PDF文件第9页  
5SHY 35L4510
GCT Data
On-state
(see Fig.
1)
3, 4, 5, 6, 14, 15)
Maximum rated values
Parameter
Max. average on-state
current
Max. RMS on-state current
Max. peak non-repetitive
surge on-state current
Limiting load integral
Max. peak non-repetitive
surge on-state current
Limiting load integral
Stray inductance between
GCT and antiparallel diode
Critical rate of rise of on-
state current
Characteristic values
Symbol Conditions
I
T(AV)M
Half sine wave, T
C
= 85 °C,
Double side cooled
I
T(RMS)
I
TSM
I
2
t
I
TSM
I
2
t
L
D
di
T
/dt
cr
Only relevant for applications with
antiparallel diode to the IGCT
For higher di
T
/dt and current lower
than 100 A an external retrigger puls
is required.
t
p
= 30 ms, Tj = 125 °C, sine wave
after surge: V
D
= V
R
= 0 V
t
p
= 10 ms, Tj = 125 °C, sine wave
after surge: V
D
= V
R
= 0 V
min
typ
max
1700
2670
32×10
3
Unit
A
A
A
6
5.12×10
21×10
3
A
2
s
A
6.62×10
300
200
6
A
2
s
nH
A/µs
Parameter
On-state voltage
Threshold voltage
Slope resistance
Symbol Conditions
V
T
I
T
= 4000 A, T
j
= 125 °C
V
(T0)
r
T
T
j
= 125 °C
I
T
= 1000...4000 A
min
typ
2.35
max
2.7
1.4
0.325
Unit
V
V
mΩ
Turn-on switching
1)
Maximum rated values
(see Fig. 14, 15)
Symbol Conditions
di
T
/dt
cr
f = 0..500 Hz, T
j
= 125 °C,
V
D
= 2800 V, I
TM
4000 A
Symbol Conditions
V
D
= 2800 V, T
j
= 125 °C
t
don
I
T
= 4000 A, di/dt = V
D
/ L
i
t
don SF
L
i
= 5 µH
C
CL
= 10 µF, L
CL
= 0.3 µH
t
r
E
on
min
typ
max
1000
Unit
A/µs
Parameter
Critical rate of rise of on-
state current
Characteristic values
Parameter
Turn-on delay time
Turn-on delay time status
feedback
Rise time
Turn-on energy per pulse
Maximum rated values
min
typ
max
3.5
7
1
1.5
Unit
µs
µs
µs
J
Turn-off switching
(see Fig. 7, 8, 10, 14, 15)
1)
Parameter
Max. controllable turn-off
current
Characteristic values
Symbol Conditions
I
TGQM
V
DM
V
DRM
, T
j
= 125°C,
V
D
= 2800 V, R
S
= 0.65
Ω,
C
CL
= 10 µF, L
CL
0.3 µH
Symbol Conditions
t
doff
V
D
= 2800 V, T
j
= 125 °C
t
doff SF
V
DM
V
DRM
, R
S
= 0.65
I
TGQ
= 4000 A, L
i
= 5 µH
C
CL
= 10 µF, L
CL
= 0.3 µH
E
off
min
typ
max
4000
Unit
A
Parameter
Turn-off delay time
Turn-off delay time status
feedback
Turn-off energy per pulse
min
typ
max
7
7
Unit
µs
µs
J
19.5
22
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1232-02 June 07
page 2 of 9