5SHX 14H4510
Err [J]
2.5
Tj = 115°C
diF/dt = 360 A/µs
VD = 2700 V
2.0
1.5
1.0
0.5
0.0
TBD
0
200
400
600
800
1000
1200
IFQ [A]
Fig. 13 Upper scatter range of diode turn-off energy
Fig. 14 Upper scatter range of diode turn-off energy
per pulse vs. turn-off current
per pulse vs decay rate of on-state current
Irr [A]
500
Tj = 115°C
diF/dt = 360 A/µs
VD = 2700 V
450
400
350
300
TBD
0
200
400
600
800
1000
1200
IFQ [A]
Fig. 15 Upper scatter range of diode reverse recovery
Fig. 16 Upper scatter range of diode reverse recovery
charge vs decay rate of on-state current
current vs decay rate of on-state current
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1227-05 Aug 07
page 9 of 13
ABB [ THE ABB GROUP ]
