5SHX 10H6010
Thermal
Maximum rated values
Note 1
Parameter
Junction operating temperature
Storage temperature range
Ambient operational temperature
Characteristic values
Symbol
T
vj
T
stg
T
a
Conditions
min
0
-40
0
typ
max
115
60
60
Unit
°C
°C
°C
Unit
K/kW
K/kW
K/kW
K/kW
Parameter
Symbol
Thermal resistance junction-to-case
R
th(jc)
of GCT
Thermal resistance case-to-
heatsink of GCT
Thermal resistance junction-to-case
of Diode
Thermal resistance case-to-
heatsink of Diode
R
th(ch)
R
th(jc)
Conditions
Double side cooled
Diode not dissipating
min
typ
max
25
8
42
8
Double side cooled
R
th(ch)
GCT not dissipating
Analytical function for transient thermal
impedance:
Z
thJC
(t) =
GCT
i
R
i
(K/kW)
τ
i
(s)
1
15.295
0.4820
∑
i
=
1
2
5.736
n
R
i
(1 - e
- t/
τ
i
)
3
2.684
0.0076
4
1.289
0.0023
0.0758
Diode
i
R
i
(K/kW)
τ
i
(s)
1
25.199
0.4963
2
9.964
0.0802
3
4.491
0.0076
4
2.347
0.0023
Fig. 1
Transient thermal impedance (junction-to-
case) vs. time (max. values)
Max. Turn-off current for Lifetime operation
•
•
•
calculated lifetime of on-board capacitors
20 years
with slightly forced air cooling (air velocity
> 0.5 m/s)
strong air cooling allows for increased
ambient temperature
Fig. 2
Max. turn-off current vs. frequency for lifetime
operation
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1226-05 Aug 07
page 5 of 13
ABB [ THE ABB GROUP ]
