5SHX 08F4510
GCT Part
Max. on-state characteristic model:
Max. on-state characteristic model:
V
T25
=
A
Tvj
+
B
Tvj
⋅
I
T
+
C
Tvj
⋅
ln(
I
T
+
1)
+
D
Tvj
⋅
I
T
A
25
TBD
I
T
[A]
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
T
[V]
Tj = 115°C
V
T115
=
A
Tvj
+
B
Tvj
⋅
I
T
+
C
Tvj
⋅
ln(
I
T
+
1)
+
D
Tvj
⋅
I
T
Valid for i
T
= TBD – TBD A
A
115
TBD
B
115
TBD
C
115
TBD
D
115
TBD
Valid for i
T
= TBD – TBD A
B
25
C
25
TBD
TBD
D
25
TBD
Fig. 3
GCT on-state voltage characteristics
Fig. 4
GCT on-state voltage characteristics
TBD
TBD
Fig. 5
GCT surge on-state current vs. pulse length,
half-sine wave
Fig. 6
GCT surge on-state current vs. number of
pulses, half-sine wave, 10 ms, 50Hz
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1223-06 Aug 07
page 6 of 13
ABB [ THE ABB GROUP ]
