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5SGF40L4502 参数 Datasheet PDF下载

5SGF40L4502图片预览
型号: 5SGF40L4502
PDF下载: 下载PDF文件 查看货源
内容描述: 不对称的门关断晶闸管 [Asymmetric Gate turn-off Thyristor]
分类和应用: 栅极
文件页数/大小: 9 页 / 344 K
品牌: ABB [ THE ABB GROUP ]
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5SGF 40L4502
GTO Data
On-state
Maximum rated values
1)
Parameter
Max. average on-state
current
Max. peak non-repetitive
surge current
Limiting load integral
Max. peak non-repetitive
surge current
Limiting load integral
Characteristic values
Symbol Conditions
I
TAVM
Half sine wave, T
C
= 85 °C
min
typ
max
1180
1850
Unit
A
A
3
Max. RMS on-state current I
TRMS
I
TSM
I
2
t
I
TSM
I
2
t
Symbol Conditions
V
T
V
(T0)
r
T
I
H
1)
t
p
= 10 ms, T
vj
= 125°C, sine wave
After Surge: V
D
= V
R
= 0 V
t
p
= 1 ms, T
vj
= 125°C, sine wave
After Surge: V
D
= V
R
= 0 V
25×10
A
A
2
s
A
A
2
s
Unit
V
V
mΩ
A
3.1×10
40×10
6
3
800×10
min
typ
max
3.8
1.2
0.65
100
3
Parameter
On-state voltage
Threshold voltage
Slope resistance
Holding current
I
T
= 4000 A, T
vj
= 125°C
T
vj
= 125°C
I
T
= 400...5000 A
T
vj
= 25°C
Turn-on switching
Maximum rated values
Parameter
Critical rate of rise of on-
state current
Critical rate of rise of on-
state current
Min. on-time
Characteristic values
Symbol Conditions
di
T
/dt
cr
di
T
/dt
cr
t
on
Symbol Conditions
t
d
t
r
E
on
V
D
= 0.5 V
DRM
, T
vj
= 125 °C
I
T
= 4000 A, di/dt = 300 A/µs,
I
GM
= 50 A, di
G
/dt = 40 A/µs, C
S
= 6
µF, R
S
= 5
T
vj
= 125°C,
I
T
= 4000 A, I
GM
= 50 A,
di
G
/dt = 40 A/µs
f = 200 Hz
f = 1 Hz
min
typ
max
500
1000
Unit
A/µs
A/µs
µs
100
min
typ
max
2.5
5
3
Parameter
Turn-on delay time
Rise time
Turn-on energy per pulse
Unit
µs
µs
J
Turn-off switching
Maximum rated values
1)
Parameter
Max. controllable turn-off
current
Min. off-time
Characteristic values
Symbol Conditions
I
TGQM
t
off
Symbol Conditions
t
S
t
f
E
off
I
GQM
V
D
= 0.5 V
DRM
, T
vj
= 125 °C
V
DM
V
DRM
, di
GQ
/dt = 40 A/µs,
I
TGQ
= I
TGQM
,
R
S
= 5Ω, C
S
= 6 µF, L
S
= 0.2 µH
V
DM
V
DRM
, di
GQ
/dt = 40 A/µs,
C
S
= 6 µF, L
S
0.2 µH
min
typ
max
4000
Unit
A
µs
100
min
typ
max
25
3
10
1100
Parameter
Storage time
Fall time
Turn-on energy per pulse
Peak turn-off gate current
Unit
µs
µs
J
A
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1209-04 Jan. 03
page 2 of 9