5SGA 30J4502
E
off
[J]
18
16
14
12
10
8
6
4
2
0
0
500
1000
1500
2000
2500
¾ V
DRM
�½ V
DRM
Conditions:
⋅
V
D
= �½⋅V
DRM
di
GQ
/dt = 40 A/
µ
s
C
S
= 6
µ
F, R
S
= 5
Ω
T
j
= 125°C
Q
GQa
[A]
10000
9000
E
off
[J]
14
µ
C
S
= 4µF
12
µ
C
S
= 3µF
10
8
6
4
2
0
0
500
1000
1500
2000
2500
3000
I
TGQ
[A]
Conditions:
di
GQ
/dt =40 A/
µ
s
T
j
= 125 °C
Q
GQa
8000
7000
µ
C
S
= 6µF
V
DM
=V
DRM
6000
5000
4000
3000
2000
1000
0
3000
I
TGQ
[A]
Fig. 12
Turn-off energy per pulse vs. turn-off current
and peak turn-off voltage. Extracted gate
charge vs. turn-off current.
C
s
[
µ
F]
6
Condition:
V
D
= �½
⋅
V
DRM
, V
DM
= V
DRM
di
GQ
/dt = 40 A/
µ
s
R
S
= 5
Ω
, LS
≤
300 nH
Fig. 13
Turn-off energy per pulse vs. turn-off current
and snubber capacitance.
E
off
[J] t
s
[
µ
s]
30
50
I
GQM
[A]
1000
I
GQM
24
40
800
5
4
18
30
600
3
t
S
12
20
E
off
400
2
6
10
Condition:
di
Q
/dt = 40 A/
µ
s
G
Tj = 125 °C
200
1
1000
1500
2000
2500
3000
I
GQM
[A]
0
0
-10 0
10
20
25
30
40 50
60
70
75
80
0
90 100 110 120
125
T
j
[°C]
Fig. 14
Required snubber capacitor vs. max
allowable turn-off current.
I
GQM
[A]
Fig. 15
Turn-off energy per pulse, storage time and
peak turn-off gate current vs. junction
temperature.
t
s
[s]
50
45
40
35
30
25
20
15
10
5
0
0
500
1000
1500
2000
2500
t
S
Conditions:
di
GQ
/dt =40 A/
µ
s
T
j
= 125 °C
I
GQM
[A]
t
s
[s]
50
45
40
35
30
25
20
15
10
5
0
0
10
20
30
40
50
Conditions:
I
TGQ
= 3000 A
T
j
= 125 °C
1000
I
GQM
900
800
700
600
1000
800
600
t
S
500
400
300
200
100
0
60
di
GQ
/dt [A/
µ
s]
I
GQM
400
200
0
3000
I
TGQ
[A]
Fig. 16
Storage time and peak turn-off gate current
vs. neg. gate current rise rate.
Fig. 17
Storage time and peak turn-off gate current
vs. turn-off current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1202-03 Jan. 03
page 7 of 9
ABB [ THE ABB GROUP ]
