5SGA 20H4502
GTO Data
On-state
I
TAVM
I
TRMS
I
TSM
Max. average on-state current
Max. RMS on-state current
Max. peak non-repetitive
surge current
I
2
t
Limiting load integral
710 A
1115 A
13 kA
24 kA
2
0.85⋅10
6
A s
2
0.29⋅10
6
A s
Half sine wave, T
C
= 85 °C
t
P
t
P
t
P
t
P
I
T
I
T
=
=
=
=
=
10 ms
1 ms
10 ms
1 ms
2000 A
T
j
=
125°C
After surge:
V
D
= V
R
= 0V
V
T
V
T0
r
T
I
H
On-state voltage
Threshold voltage
Slope resistance
Holding current
3.50 V
1.80 V
0.85 mΩ
50 A
= 400 - 3000 A
T
j
=
125 °C
T
j
= 25 °C
Gate
V
GT
I
GT
V
GRM
I
GRM
Gate trigger voltage
Gate trigger current
Repetitive peak reverse voltage
Repetitive peak reverse current
1.0 V
2.5 A
17 V
50 mA
V
GR
= V
GRM
V
D
R
A
= 24 V
= 0.1
Ω
T
j
=
25 °C
Turn-on switching
di/dt
crit
Max. rate of rise of on-state
current
t
d
t
r
t
on(min)
E
on
Delay time
Rise time
Min. on-time
Turn-on energy per pulse
400 A/µs
600 A/µs
2.0 µs
6.0 µs
80 µs
2.50 Ws
f = 200Hz
f = 1Hz
V
D
=
I
T
=
I
T
= 2000 A,
T
j
= 125 °C
I
GM
= 30 A, di
G
/dt = 20 A/µs
0.5 V
DRM
T
j
2000 A
30 A
4 µF
=
125 °C
200 A/µs
20 A/µs
5
Ω
di/dt =
di
G
/dt =
R
S
=
I
GM
=
C
S
=
Turn-off switching
I
TGQM
Max controllable turn-off
current
t
s
t
f
t
off(min)
E
off
I
GQM
Storage time
Fall time
Min. off-time
Turn-off energy per pulse
Peak turn-off gate current
22.0 µs
3.0 µs
80 µs
7.5 Ws
725 A
2000 A
V
DM
= V
DRM
C
S
V
D
T
j
= 4 µF
= �½ V
DRM
=
di
GQ
/dt =
L
S
V
DM
≤
=
30 A/µs
0.3 µH
V
DRM
30 A/µs
125 °C di
GQ
/dt =
I
TGQ
= I
TGQM
C
S
L
S
=
≤
4 µF R
S
0.3 µH
=
5
Ω
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA 1210-01 Aug. 2000
page 2 of 9
ABB [ THE ABB GROUP ]
