5SDF 05F4502
On-state
(see Fig. 1, 2)
I
FAVM
I
FRMS
I
FSM
Max. average on-state current
Max. RMS on-state current
Max. peak non-repetitive
surge current
òI
2
dt
Max. surge current integral
435 A
685 A
16 kA
32 kA
2
1.28⋅10
6
A s
2
0.5⋅10
6
A s
Half sine wave, T
c
= 70°C
tp
tp
tp
tp
I
F
=
=
=
=
=
10 ms
1 ms
10 ms
1 ms
1100 A
Before surge:
T
c
= T
j
= 115°C
After surge:
V
R
≈
0 V
V
F
V
F0
r
F
Forward voltage drop
Threshold voltage
Slope resistance
≤
4.7 V
2.42 V
2.1 mΩ
Approximation for
I
F
= 200…2000
A
T
j
= 115°C
Turn-on
V
fr
Peak forward recovery voltage
≤
370 V
di/dt = 1000 A/µs, T
j
= 115°C
Turn-off
(see Fig. 3, 4)
di/dt
crit
I
rr
Q
rr
E
rr
Max. decay rate of on-state current
Reverse recovery current
Reverse recovery charge
Turn-off energy
≤
≤
≤
≤
430 A/µs
610 A
µC
3.1 J
I
F
= 1100 A,
V
Dclink
= 2800 V
I
F
= 1100 A,
di/dt = 360 A/µs,
T
j
= 115 °C
V
DClink
= 2700 V
T
j
= 115°C,
Thermal
T
j
T
stg
R
thJC
Operating junction temperature range
Storage temperature range
Thermal resistance junction to case
≤
≤
≤
R
thCH
Thermal resistance case to heatsink
≤
≤
Analytical function for transient thermal impedance.
-40...115°C
-40...125°C
32 K/kW
32 K/kW
17 K/kW
10 K/kW
5 K/kW
Anode side cooled
Cathode side cooled
Double side cooled
Single side cooled
Double side cooled
F
m
=
18… 22 kN
Z
thJC
(t) =
å
n
i
1
9.64
0.381
2
3.08
0.428
3
1.18
0.0048
4
0.55
0.0013
R
i
(1 - e
- t /
τ
i
)
R
i
(K/kW)
i
=
1
τ
i
(s)
F
m
= 18… 22 kN Double side cooled
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1151-01 Sep. 01
page 2 of 5
ABB [ THE ABB GROUP ]
