5SDD 60Q2800
ò i2dt [MA2s]
IFSM [kA]
I
FSM(kA)
5SDD 60Q2800
150
50
9 0
8 0
7 0
6 0
5 0
4 0
3 0
2 0
1 0
0
IFSM
Tj = 160°C
140
130
120
110
100
90
48
Tj = 160°C
46
44
42
40
38
36
34
32
30
80
70
i2t
60
ò
50
100
101
102
2 0
n p
0
6 7 8 1
1
2
3
4
5
t [ms]
Fig. 6 Surge on-state current vs. pulse length. Half-
Fig. 7 Surge on-state current vs. number of pulses.
sine wave.
Half-sine wave, 10 ms, 50Hz.
IRM(A)
Qrr
(µA )
s
700
600
30000
500
IFRM = 4000 A
Tj = Tjmax
IFRM = 4000 A
Tj = Tjmax
20000
400
300
200
104
8000
7000
6000
102
80
70
60
50
5000
4000
3000
40
30
20 0
0
30
1
2
3
4
5
6
7 8 910
20
30
1
2
3
4
5
6
7 8 910
20
(
-d /d A µs)
iF
/
t
-diF/dt(A/µs)
Fig. 8 Recovery charge vs. decay rate of on-state
Fig. 9 Peak reverse recovery current vs. decay rate
current.
of on-state current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1161-01 Feb. 05
page 5 of 6
ABB [ THE ABB GROUP ]
