V
RSM
I
F(AV)M
I
F(RMS)
I
FSM
V
F0
r
F
=
=
=
=
=
=
2800
5380
8450
65×10
3
0.77
0.082
V
A
A
A
V
mΩ
Rectifier Diode
5SDD 51L2800
Doc. No. 5SYA1103-01 Feb. 05
•
Patented free-floating silicon technology
•
Very low on-state losses
•
High average and surge current.
Blocking
Maximum rated values
1)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Characteristic values
Symbol Conditions
V
RRM
V
RSM
V
RSM
f = 50 Hz, t
p
= 10ms, T
j
= 175°C
f = 5 Hz, t
p
= 10ms, T
j
= 175°C
f = 50 Hz, t
p
≤
5ms, T
j
= ...175°C
Value
2000
2800
3000
Unit
V
V
V
Parameter
Max. (reverse) leakage current
Symbol Conditions
I
RRM
V
RRM
, Tj = 175°C
min
typ
max
400
Unit
mA
T
vj
= -40°C reduces V
RSM
and V
RRM
by 5%.
Mechanical data
Maximum rated values
1)
Parameter
Mounting force
Acceleration
Acceleration
Characteristic values
Symbol Conditions
F
M
a
a
Device unclamped
Device clamped
min
63
typ
70
max
77
50
100
Unit
kN
m/s
m/s
2
2
Parameter
Weight
Housing thickness
Surface creepage distance
Symbol Conditions
m
H
D
S
F
M
= 70 kN, T
a
= 25 °C
min
25.7
35
typ
max
1.45
26.3
Unit
kg
mm
mm
mm
Air strike distance
D
a
14
1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB [ THE ABB GROUP ]
