5SDD 0120C0200
On-state
I
FAVM
I
FRMS
I
FSM
∫I
2
dt
Max. average on-state current
Max. RMS on-state current
Max. peak non-repetitive surge current
11000 A
17300 A
85000 A
92500 A
Max. surge current integral
t
p
=
t
p
=
10 ms Before surge
8.3 ms T
j
= 170 °C
10 ms
After surge:
Half sine wave, T
c
= 85 °C
36100 kA
2
s t
p
=
35700 kA
2
s t
p
=
8.3 ms V
R
≈
0V
8000 A
T
j
= 170 °C
V
F max
V
F0
r
F
Maximum on-state voltage
Threshold voltage
Slope resistance
≤
0.92 V
0.75 V
0.020 mΩ
I
F
=
Approximation for T
j
= 170 °C
I
F
=
8 - 18 kA
Thermal characteristics
T
j
T
stg
R
th(j-c)
Operating junction temperature range
Storage temperature range
Thermal resistance
junction to case
-40...170 °C
-40…170 °C
≤
≤
≤
R
th(c-h)
Thermal resistance
case to heatsink
≤
≤
12 K/kW Anode side cooled
12 K/kW Cathode side cooled
6 K/kW Double side cooled
6 K/kW Single side cooled
3 K/kW Double side cooled
F
M
= 35…40 kN
Z
thJC
[K/kW]
8
Double sided cooling
F
m
= 35...40 kN
Z
th
(
j - c
)
(t) =
i
1
3.37
0.095
R
i
(K/kW)
5SDD 0120C0200
∑
2
4
R
i
(1 - e
- t /
τ
i
)
3
0.63
0.0035
4
0.67
0.001
6
i
=
1
1.50
4
τ
i
(s)
0.048
2
F
M
= 35…40 kN
Double side cooled
0
10
-3
10
-2
10
-1
t [s]
10
0
Fig. 2
Transient thermal impedance (junction-to-case) vs. time in analytical and graphical forms.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
page 2 of 4
Doc. No. 5SYA1157-01 July 06
ABB [ THE ABB GROUP ]
