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NTMJS1D15N03CGTWG

MOSFET, Power N Channel 30V LFPAK 
暂无信息
1 ONSEMI

ISP650P06NM

OptiMOS™ P-channel 60V MOSFETs in SOT-223 package is ideally suited for load switch, battery management as well as reverse polarity protection applications. Main advantage of OptiMOS™ P-channel MOSFETs is the simplifying of the design complexity in medium and low power applications. Its easy interface to Microcontroller Unit (MCU), fast switching as well as avalanche ruggedness makes Infineon’s OptiMOS™ P-channel MOSFETs suitable for high quality demanding applications. The products improve efficiency at low loads due to low Qg.and are available in normal and logic level featuring a wide RDS(on) range.
微控制器
0 INFINEON

BSZ070N08LS5

英飞凌OptiMOS™ 5 功率 MOSFET 逻辑电平特别适用于无线充电、适配器和电信应用。该器件栅极电荷 (Q g) 低,降低开关损耗,而不影响导通损耗。改进品质因数,支持在高开关频率下运行。此外,逻辑电平驱动提供低栅极阈值电压 (V GS(th)),使 MOSFET 能够由 5V 驱动并且直接由微控制器驱动。
开关无线驱动控制器电信微控制器栅极
0 INFINEON

GRT1555C1E561JA02#

汽车[信息娱乐 / 舒适设备],工业设备,植入式以外的医疗器械设备 [GHTF A/B/C]
医疗医疗器械
0 MURATA

FS150R17N3E4

EconoPACK™ 3 1700 V,150 A 六单元 IGBT 模块,采用第四代快速TRENCHSTOP™ IGBT、第四代发射极控制二极管和NTC 温度检测 。还可提供采用压接技术的型号:FS150R17N3E4_B11.
双极性晶体管二极管
0 INFINEON

GRM1551X1H5R9BA01#

民用设备,工业设备,移动设备,植入式以外的医疗器械设备 [GHTF A/B/C],汽车[信息娱乐 / 舒适设备]
医疗医疗器械
0 MURATA

GRM1552C1H5R1DA01#

民用设备,工业设备,移动设备,植入式以外的医疗器械设备 [GHTF A/B/C],汽车[信息娱乐 / 舒适设备]
医疗医疗器械
0 MURATA

BV1LB085FJ-C

BV1LB085FJ-C是车载用1ch低边开关。内置过电流限制电路、过热保护电路、有源钳位电路。
开关
2 ROHM

FCD380N60E

功率 MOSFET,N 沟道,SUPERFET®,Easy Drive,600 V,10.2 A,380 mΩ,DPAK
暂无信息
0 ONSEMI

GQM22M5C2H9R3CB01#

民用设备,工业设备,移动设备,植入式以外的医疗器械设备 [GHTF A/B/C],汽车[信息娱乐 / 舒适设备]
医疗医疗器械
0 MURATA

GRM188R71E242KA01#

民用设备,工业设备,移动设备,植入式以外的医疗器械设备 [GHTF A/B/C],汽车[信息娱乐 / 舒适设备]
医疗医疗器械
0 MURATA

GRM1885C2A6R0DA01#

民用设备,工业设备,移动设备,植入式以外的医疗器械设备 [GHTF A/B/C],汽车[信息娱乐 / 舒适设备]
医疗医疗器械
1 MURATA

GJM0335C1H5R1BB01#

民用设备,工业设备,移动设备,植入式以外的医疗器械设备 [GHTF A/B/C],汽车[信息娱乐 / 舒适设备]
医疗医疗器械
0 MURATA

RB088T-40NZ

RB088T-40NZ是面向开关电源的超低IR肖特基势垒二极管。
开关二极管
0 ROHM

BSC021N08NS5

Infineon's OptiMOS™ MOSFETs in SuperSO8 package extend OptiMOS™ 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance.
暂无信息
0 INFINEON