20V P-Channel Power MOSFET
Typical Characteristics
AAT7357
T
J
= 25ºC, unless otherwise noted.
Source-Drain Diode Forward Voltage
100
Single Pulse Power, Junction to Ambient
40
35
30
Power (W)
1.2
10
25
20
15
10
5
I
S
(A)
1
T
J
= 150°C
T
J
= 25°C
0.1
0
0
0 .2
0.4
0 .6
0.8
1
1.00E-03 1.00E-02 1.00E-01 1.00E+01 1.00E+01 1.00E+02 1.00E+03
V
SD
(V)
Time (s)
Transient Thermal Response, Junction to Ambient
Normalized Effective
Transient Thermal Impedance
10
1
.5
0.1
.2
.1
.02
.01
Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
0.01
Time (s)
4
7357.2005.04.1.0