AAT3236
300mA CMOS High Performance LDO
Electrical Characteristics
VIN = VOUT(NOM) + 1V, IOUT = 1mA, COUT = 2.2µF, CIN = 1µF, CBYP = 10nF, TA = -40°C to +85°C, unless other-
wise noted. For typical values, TA = 25°C.
Symbol Description
Conditions
Min Typ Max Units
TA = 25°C
-1.5
1.5
2.5
VOUT
Output Voltage Tolerance
IOUT = 1mA to 300mA
%
TA = -40 to 85°C -2.5
300
IOUT
VDO
ISC
Output Current
VOUT > 1.2V
IOUT = 300mA
VOUT < 0.4V
mA
mV
mA
µA
Dropout Voltage1
Short-Circuit Current
Ground Current
Shutdown Current
300
600
100
500
IQ
VIN = 5V, No Load, EN = VIN
VIN = 5V, EN = 0V
150
1
ISD
µA
ΔVOUT
VOUT*ΔVIN
/
Line Regulation
VIN = VOUT + 1 to 5.5V
0.07
%/V
mV
VIN = VOUT + 1V to VOUT + 2V,
ΔVOUT(line) Dynamic Line Regulation
ΔVOUT(load) Dynamic Load Regulation
1
IOUT = 150mA, TR/TF = 2µs
IOUT = 1mA to 150mA, TR <5µs
30
mV
V
VEN(L)
VEN(H)
IEN
Enable Threshold Low
Enable Threshold High
Leakage Current Enable Pin
0.6
1
1.5
V
VEN = 5V
µA
1kHz
70
50
47
PSRR
TSD
Power Supply Rejection Ratio IOUT = 10mA, CBYP = 10nF 10kHz
dB
°C
1MHz
Over-Temperature Shutdown
Threshold
150
Over-Temperature Shutdown
Hysteresis
THYS
eN
10
45
22
°C
Output Noise
µVRMS
ppm/°C
Output Voltage Temperature
Coefficient
TC
1. VDO is defined as VIN - VOUT when VOUT is 98% of nominal.
4
3236.2007.03.1.4