IRF840
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼
Ease of Paralleling
▼
Fast Switching Characteristic
▼
Simple Drive Requirement
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
500V
0.85Ω
8A
S
Description
APEC MOSFET provide the power designer with the best combination of fast
switching , lower on-resistance and reasonable cost.
The TO-220 and package is universally preferred for all commercial-industrial
applications. The device is suited for switch mode power supplies ,DC-AC
converters and high current high speed switching circuits.
G
D
S
TO-220(P)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
E
AS
I
AR
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Rating
500
±20
8
5.1
32
125
1
2
Units
V
V
A
A
A
W
W/℃
mJ
A
℃
℃
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
320
8
-55 to 150
-55 to 150
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Value
1.0
62
Unit
℃/W
℃/W
200430071-1/4
Data & specifications subject to change without notice
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
