IRF730
10
6
T
C
=25 C
8
o
10V
7.0V
I
D
, Drain Current (A)
T
C
=150
o
C
5
10V
7 .0V
6 .0V
I
D
, Drain Current (A)
4
6
6.0V
4
3
5 .0 V
2
V
G
= 4. 5 V
2
5.0V
V
G
=4.5V
0
0
4
8
12
16
1
0
0
4
8
12
16
20
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
3
I
D
=3.3A
V
G
=10V
Normalized BV
DSS
(V)
1.1
Normalized R
DS(ON)
2
1
1
0.9
0.8
-50
0
50
100
150
0
-50
0
50
100
150
T
j
, Junction Temperature ( C)
o
T
j
, Junction Temperature ( C )
o
Fig 3. Normalized BV
DSS
v.s. Junction
Temperature
10
1.4
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8
1.2
T
j
= 150 C
6
o
T
j
= 25 C
o
Normalized V
GS(th)
(V)
1
I
S
(A)
4
0.8
2
0.6
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.4
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
