AP92T03GS/P
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=40A
V
GS
=4.5V, I
D
=30A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Symbol
V
SD
t
rr
Q
rr
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=40A
V
DS
=24V, V
GS
=0V
V
GS
= +20V, V
DS
=0V
I
D
=40A
V
DS
=20V
V
GS
=4.5V
V
DS
=15V
I
D
=40A
R
G
=1Ω,V
GS
=10V
R
D
=0.375Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
Test Conditions
I
S
=40A, V
GS
=0V
I
S
=20A, V
GS
=0V,
dI/dt=100A/µs
Drain-Source Leakage Current (T
j
=125
o
C)
V
DS
=24V ,V
GS
=0V
Min.
30
-
-
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Min.
-
-
-
Typ.
-
-
-
-
100
-
-
-
45
6
26
12
63
40
7
930
770
Typ.
-
39
42
Max. Units
-
4
5.2
2
-
1
250
+100
72
-
-
-
-
-
-
-
-
V
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
3500 5600
Source-Drain Diode
Max. Units
1.3
-
-
V
ns
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 80A .
4.Surface mounted on 1 in
2
copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
