AP92T03GS/P
f=1.0MHz
14
10000
1000
100
I D = 40 A
12
C iss
V DS = 12 V
10
V
DS = 16 V
V
DS = 20 V
8
6
4
2
0
C oss
C rss
0
20
40
60
80
100
120
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
1000
Duty factor=0.5
0.2
100
100us
1ms
0.1
0.1
0.05
PDM
0.02
10
10ms
100ms
1s
t
T
0.01
T C =25 o
Single Pulse
C
Single Pulse
Duty factor = t/T
DC
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
1
0.0001
0.001
0.01
0.1
1
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
280
240
200
160
120
80
V DS =5V
VG
QG
T j =25 o
C
T j =150 o
C
4.5V
QGD
QGS
40
Q
Charge
0
0
1
2
3
4
5
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
