AP92T03GI-HF
12
5000
f=1.0MHz
I
D
= 40 A
10
V
GS
, Gate to Source Voltage (V)
4000
8
C (pF)
V
DS
= 12 V
V
DS
= 16 V
V
DS
= 20 V
C
iss
3000
6
2000
4
1000
2
C
oss
C
rss
0
0
20
40
60
80
100
120
0
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Duty factor=0.5
Normalized Thermal Response (R
thjc
)
0.2
100
0.1
0.1
I
D
(A)
100us
0.05
0.02
0.01
1ms.
10
P
DM
0.01
t
Single Pulse
10ms
T
C
=25 C
Single Pulse
1
0.1
1
10
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
o
100ms
DC
100
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
