AP4407GS/P
250
150
T
C
=25 C
200
o
-10V
-8.0V
-I
D
, Drain Current (A)
T
C
=150
o
C
-10V
-8.0V
-6.0V
-I
D
, Drain Current (A)
100
150
-6.0V
100
-4.5V
50
-4.5V
50
V
G
=-3.0V
0
V
G
=-3.0V
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
25
1.8
I
D
= -16 A
T
C
=25
℃
Normalized R
DS(ON)
20
1.6
I
D
=-24A
V
G
=-10V
1.4
R
DS(ON)
(m
Ω
)
1.2
15
1.0
0.8
10
2
4
6
8
10
0.6
-50
0
50
100
150
-V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3.0
30
2.5
20
-V
GS(th)
(V)
1.4
2.0
-I
S
(A)
T
j
=150
o
C
T
j
=25
o
C
1.5
10
1.0
0
0
0.2
0.4
0.6
0.8
1
1.2
0.5
-50
0
50
100
150
-V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
