AP4407GM-HF
40
40
-I
D
, Drain Current (A)
-I
D
, Drain Current (A)
30
T
A
=25
o
C
-10V
-5.0V
-4.5V
-4.0V
T
A
=150
o
C
30
-10V
-5.0V
-4.5V
-4.0V
20
20
V
G
=-3.0V
10
V
G
=-3.0V
10
0
0
1
2
3
0
0
1
1
2
2
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
25
1.80
I
D
=-10A
T
A
=25
o
C
Normalized R
DS(ON)
1.60
I
D
=-10A
V
GS
= -10V
R
DS(ON)
(m
Ω
)
20
1.40
1.20
15
1.00
0.80
10
0.60
3
5
7
9
11
-50
0
50
100
150
-V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.6
100.00
2.2
10.00
-V
GS(th)
(V)
o
T
j
=150 C
T
j
=25
o
C
1.8
-I
S
(A)
1.00
1.4
0.10
1
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
0.6
-50
0
50
100
150
-V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
